Development of a Tabletop Deep Reactive-Ion Etching System for MEMS Development and Production
نویسنده
چکیده
منابع مشابه
Development and Optimization of Integrative MEMS-Based Gray-Scale Technology In Silicon For Power MEMS Applications
As the field of micro-electro-mechanical systems (MEMS) has diversified, a growing number of applications are limited by the current planar technology available for fabrication. Gray-scale technology offers a method of fabricating 3-D structures in MEMS utilizing a single lithography step. Before gray-scale technology can be accepted as a universal/standard fabrication technique, methods for co...
متن کاملMEMS and FOG Technologies for Tactical and Navigation Grade Inertial Sensors—Recent Improvements and Comparison
In the following paper, we present an industry perspective of inertial sensors for navigation purposes driven by applications and customer needs. Microelectromechanical system (MEMS) inertial sensors have revolutionized consumer, automotive, and industrial applications and they have started to fulfill the high end tactical grade performance requirements of hybrid navigation systems on a series ...
متن کاملThree Dimensional MEMS Supercapacitor Fabricated by DRIE on Silicon Substrate
Micro power sources are required to be used in autonomous microelectromechanical system (MEMS). In this paper, we designed and fabricated a three dimensional (3D) MEMS supercapacitor, which is consisting of conformal silicon dioxide/titanium/polypyrrole (PPy) layers on silicon substrate. At first, through-structure was fabricated on the silicon substrate by high-aspect-ratio deep reactive ion e...
متن کاملA new low-temperature high-aspect-ratio MEMS process using plasma activated wafer bonding
This paper presents the development and characterization of a new high-aspect-ratio MEMS process. The silicon-on-silicon (SOS) process utilizes dielectric barrier discharge surface activated low-temperature wafer bonding and deep reactive ion etching to achieve a high aspect ratio (feature width reduction-to-depth ratio of 1:31), while allowing for the fabrication of devices with a very high an...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2016